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SiC MOSFET

安海半导体推出基于世界领先的车规级平面高密度工艺与沟槽工艺的第三代宽禁带功率半导体碳化硅SIC MOSFET产品，产品性能：高频率、高功率、高效率、低导通电阻优点。具有电流密度高、开关速度快、浪涌和短路能力强等优点，电压覆盖650V 、750V 、800V、1200V、1700V、2000V、3300V 、4500V 、6500V 、10KV , 典型应用领域为消费电源、新能源汽车、充电桩、工业电源、光伏逆变、储能电源、风力发电、轨道交通、SST电力电子变压器等。在应用上更能满足高压、大电流、高效率、高功率密度的性能要求。

产品选型

搜索
Class Product Name Package BVds[V] Id [A]25℃ Vgs(th)[Typ V] Rds(on) /mohm Vgs=10V Qg [nC]at 10V Features
Typ. Max.
650V Family
ADW065N028AH TO247-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N028AH TO-247-4L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADR065N028AH TOLL 8L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADS065N028AH Q-DPAK 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADB65N028AH TO-263-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADY065N028AH TOLT 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADJ065N028AH TO263-7L-LF/T2PAK-7R 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N060 TO-247-4L 650 32 2.7 65 80 39.5 SIC MOSFET G3
ADA065N310 TO-220F 650 10 3.9 330 440 9 SIC MOSFET G4
750V Family ADW075N015 TO247-3L 750 126 2.2 15 21 187.3 SIC MOSFET G4
800V Family
ADA080N120 TO-220F 800 19 2.8 120 160 15.3 SIC MOSFET G4
ADD080N120 TO-252 800 19 2.8 120 160 15.3 SIC MOSFET G4
ADA080N160 TO-220F 800 18 2.8 160 200 21.24 SIC MOSFET G4
ADD080N160 TO-252 800 18 2.8 160 200 21.24 SIC MOSFET G4
ADA080N410 TO-220F 800 9 3.8 410 530 9 SIC MOSFET G4
ADD080N410 TO-252 800 9 3.8 410 530 9 SIC MOSFET G4
ADA080N460 TO-220F 800 7 3.8 460 590 6.7 SIC MOSFET G4
ADD080N460 TO-252 800 7 3.8 460 590 6.7 SIC MOSFET G4
AI3F02R08HPD HPD 750 600 2.2 2 2.5 1500 SIC MOSFET G4
1200V Family
ADW120N080G2 TO-247-3L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADQ120N080G2 TO-247-4L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADG120N080G2 TO-263-7L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADJ120N080G2 TO263-7L-LF/T2PAK-7R 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N080 TO-247-3L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N080 TO-247-4L 1200 38 3.5 80 100 88 SIC MOSFET
ADG120N080 TO-263-7L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N040G2 TO-247-4L 1200 68 2.7 40 45 103 SIC MOSFET G2
ADW120N040 TO-247-3L 1200 58 2.7 37 52 84 SIC MOSFET G2
ADQ120N040 TO-247-4L 1200 72 3.2 40 45 176 SIC MOSFET
ADW120N040L TO-247-3L 1200 77 2.5 35 45 176 SIC MOSFET
ADQ120N040L TO-247-4L 1200 77 2.5 35 45 176 SIC MOSFET
ADW120N040BH TO247-3L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADQ120N040BH TO-247-4L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADG120N040BH TO-263-7L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADM120N040BH DFN8*8 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADW120N016AG TO247-3L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016AG TO-247-4L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016BG TO247-3L 1200 131 2.0 12 16 203 SIC MOSFET G3
ADQ120N016BG TO-247-4L 1200 131 2.0 12 16 203 SIC MOSFET G3
ADG120N016BG TO-263-7L 1200 131 2.0 12 16 203 SIC MOSFET G3
AI3F02R12HPDB HPD 1200 400 3.0 2.58 3.1 1310 SIC MOSFET G3
AI1F02R12DCM DCM 1200 400 2.9 5.9 6.5 2010 SIC MOSFET G3
AIS08R12TK STPAK 1200 230 2.9 9.2 12 301 SIC MOSFET G3
ADK120N015 ED3 1200 200 2.5 15 17 520 SIC MOSFET
AI1F03R12M62 62M 1200 400 2.3 2.51 4.1 1620 SIC MOSFET G4
AI1F03R12ED3 ED3 1200 400 2.3 2.51 - 1620 SIC MOSFET G4
AI1F02R12ED3 ED3 1200 500 2.3 2 - 2030 SIC MOSFET G4
ADY120N016BG TOLT 1200 131 2.0 12 16 203 SIC MOSFET G3
AI1S08R12TK TPAK 1200 230 2.3 10.5 12 406 SIC MOSFET G4
ADQ120N004-P TO-247LP-4L 1200 - - 4 6 - SIC MOSFET G4
ADQ120N040 TO-247-4L 1200 58 2.7 37 52 84 SIC MOSFET G2
ADA120N080G2 TO-220F 1200 35 2.8 80 100 58 SIC MOSFET G2
1700V Family
ADQ170N022BG TO-247-4L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADW170N022BG TO247-3L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADQ170N100 TO-247-4L 1700 29 2.7 100 130 74 SIC MOSFET
2000V Family ADQ200N015 TO-247-4L 2000 244 3.0 12 17 236.2 SIC MOSFET G4
2300V Family ADQ230N020 TO-247-4L 2300 - - - - - SIC MOSFET G4
3300V Family ADQ330N030 TO-247-4L 3300 - - 28 36 - SIC MOSFET G4
4500V Family ADQ450N050 TO-247-4L 4500 - - 48 60 - SIC MOSFET G4
6500V Family ADQ650N050HV TO-247LP-4L 6500 - 4.0 45 60 - SIC MOSFET G4
10KV Family ADQ1KN130HV TO-247LP-4L 10000 - 4.0 135 175 - SIC MOSFET G4

应用方案

SiC器件在新能源汽车上的应用—电机驱动、SiC器件在新能源汽车上的应用

SJ MOSFET

安海半导体推出新一代SJ MOSFET系列,采用先进的多层外延技术，优化了元胞结构，具有电流能力强，短路能力好，雪崩特性强，体内二极管反向恢复特性优，dv/dt能力优，EMI特性好，抗浪涌能力强的等特点和优点。 基于电荷平衡，超结核心是pillar柱与N-EPI 电荷平衡，在击穿状态下，完全耗尽。DeepTrench工艺，由于Pillar柱一次形成，无法对Pillar浓度做调整。 而多层外延技术，则可以分步进行调整，使器件的鲁棒性更强，更宽的SOA区间，具有优异的EMI及抗浪涌能力，性能更加稳定。 主要应用于电子产品充电器，LED照明，车载OBC，充电桩，光伏逆变，DC-DC电源等行业。

产品选型

搜索
Class Product Name Package BVds[V] Id [A]25℃ Vgs(th)[Typ V] Rds(on) /mohm Vgs=10V Qg [nC]at 10V Features
Typ. Max.
650V Family
ADW065N028AH TO247-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N028AH TO-247-4L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADR065N028AH TOLL 8L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADS065N028AH Q-DPAK 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADB65N028AH TO-263-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADY065N028AH TOLT 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADJ065N028AH TO263-7L-LF/T2PAK-7R 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N060 TO-247-4L 650 32 2.7 65 80 39.5 SIC MOSFET G3
ADA065N310 TO-220F 650 10 3.9 330 440 9 SIC MOSFET G4
750V Family ADW075N015 TO247-3L 750 126 2.2 15 21 187.3 SIC MOSFET G4
800V Family
ADA080N120 TO-220F 800 19 2.8 120 160 15.3 SIC MOSFET G4
ADD080N120 TO-252 800 19 2.8 120 160 15.3 SIC MOSFET G4
ADA080N160 TO-220F 800 18 2.8 160 200 21.24 SIC MOSFET G4
ADD080N160 TO-252 800 18 2.8 160 200 21.24 SIC MOSFET G4
ADA080N410 TO-220F 800 9 3.8 410 530 9 SIC MOSFET G4
ADD080N410 TO-252 800 9 3.8 410 530 9 SIC MOSFET G4
ADA080N460 TO-220F 800 7 3.8 460 590 6.7 SIC MOSFET G4
ADD080N460 TO-252 800 7 3.8 460 590 6.7 SIC MOSFET G4
AI3F02R08HPD HPD 750 600 2.2 2 2.5 1500 SIC MOSFET G4
1200V Family
ADW120N080G2 TO-247-3L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADQ120N080G2 TO-247-4L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADG120N080G2 TO-263-7L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADJ120N080G2 TO263-7L-LF/T2PAK-7R 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N080 TO-247-3L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N080 TO-247-4L 1200 38 3.5 80 100 88 SIC MOSFET
ADG120N080 TO-263-7L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N040G2 TO-247-4L 1200 68 2.7 40 45 103 SIC MOSFET G2
ADW120N040 TO-247-3L 1200 58 2.7 37 52 84 SIC MOSFET G2
ADQ120N040 TO-247-4L 1200 72 3.2 40 45 176 SIC MOSFET
ADW120N040L TO-247-3L 1200 77 2.5 35 45 176 SIC MOSFET
ADQ120N040L TO-247-4L 1200 77 2.5 35 45 176 SIC MOSFET
ADW120N040BH TO247-3L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADQ120N040BH TO-247-4L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADG120N040BH TO-263-7L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADM120N040BH DFN8*8 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADW120N016AG TO247-3L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016AG TO-247-4L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016BG TO247-3L 1200 131 2.0 12 16 203 SIC MOSFET G3
ADQ120N016BG TO-247-4L 1200 131 2.0 12 16 203 SIC MOSFET G3
ADG120N016BG TO-263-7L 1200 131 2.0 12 16 203 SIC MOSFET G3
AI3F02R12HPDB HPD 1200 400 3.0 2.58 3.1 1310 SIC MOSFET G3
AI1F02R12DCM DCM 1200 400 2.9 5.9 6.5 2010 SIC MOSFET G3
AIS08R12TK STPAK 1200 230 2.9 9.2 12 301 SIC MOSFET G3
ADK120N015 ED3 1200 200 2.5 15 17 520 SIC MOSFET
AI1F03R12M62 62M 1200 400 2.3 2.51 4.1 1620 SIC MOSFET G4
AI1F03R12ED3 ED3 1200 400 2.3 2.51 - 1620 SIC MOSFET G4
AI1F02R12ED3 ED3 1200 500 2.3 2 - 2030 SIC MOSFET G4
ADY120N016BG TOLT 1200 131 2.0 12 16 203 SIC MOSFET G3
AI1S08R12TK TPAK 1200 230 2.3 10.5 12 406 SIC MOSFET G4
ADQ120N004-P TO-247LP-4L 1200 - - 4 6 - SIC MOSFET G4
ADQ120N040 TO-247-4L 1200 58 2.7 37 52 84 SIC MOSFET G2
ADA120N080G2 TO-220F 1200 35 2.8 80 100 58 SIC MOSFET G2
1700V Family
ADQ170N022BG TO-247-4L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADW170N022BG TO247-3L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADQ170N100 TO-247-4L 1700 29 2.7 100 130 74 SIC MOSFET
2000V Family ADQ200N015 TO-247-4L 2000 244 3.0 12 17 236.2 SIC MOSFET G4
2300V Family ADQ230N020 TO-247-4L 2300 - - - - - SIC MOSFET G4
3300V Family ADQ330N030 TO-247-4L 3300 - - 28 36 - SIC MOSFET G4
4500V Family ADQ450N050 TO-247-4L 4500 - - 48 60 - SIC MOSFET G4
6500V Family ADQ650N050HV TO-247LP-4L 6500 - 4.0 45 60 - SIC MOSFET G4
10KV Family ADQ1KN130HV TO-247LP-4L 10000 - 4.0 135 175 - SIC MOSFET G4

应用方案

便捷式储能应用

SGT MOSFET

安海半导体为客户提供了丰富的低压MOSFET产品，采用先进的 SGT MOS技术，极低的 FOM[RDS(on)xQg] 实现了低的导通和开关损耗，便于客户提高产品效率，做到更高的功率密度。优秀的EAS和SOA参数便于客户产 品适应不同的负载应用。-40°C-150°C的工作结温，便于客户产品在不同工作环境温度的应用。

产品选型

搜索
Class Product Name Package BVds[V] Id [A]25℃ Vgs(th)[Typ V] Rds(on) /mohm Vgs=10V Qg [nC]at 10V Features
Typ. Max.
650V Family
ADW065N028AH TO247-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N028AH TO-247-4L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADR065N028AH TOLL 8L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADS065N028AH Q-DPAK 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADB65N028AH TO-263-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADY065N028AH TOLT 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADJ065N028AH TO263-7L-LF/T2PAK-7R 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N060 TO-247-4L 650 32 2.7 65 80 39.5 SIC MOSFET G3
ADA065N310 TO-220F 650 10 3.9 330 440 9 SIC MOSFET G4
750V Family ADW075N015 TO247-3L 750 126 2.2 15 21 187.3 SIC MOSFET G4
800V Family
ADA080N120 TO-220F 800 19 2.8 120 160 15.3 SIC MOSFET G4
ADD080N120 TO-252 800 19 2.8 120 160 15.3 SIC MOSFET G4
ADA080N160 TO-220F 800 18 2.8 160 200 21.24 SIC MOSFET G4
ADD080N160 TO-252 800 18 2.8 160 200 21.24 SIC MOSFET G4
ADA080N410 TO-220F 800 9 3.8 410 530 9 SIC MOSFET G4
ADD080N410 TO-252 800 9 3.8 410 530 9 SIC MOSFET G4
ADA080N460 TO-220F 800 7 3.8 460 590 6.7 SIC MOSFET G4
ADD080N460 TO-252 800 7 3.8 460 590 6.7 SIC MOSFET G4
AI3F02R08HPD HPD 750 600 2.2 2 2.5 1500 SIC MOSFET G4
1200V Family
ADW120N080G2 TO-247-3L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADQ120N080G2 TO-247-4L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADG120N080G2 TO-263-7L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADJ120N080G2 TO263-7L-LF/T2PAK-7R 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N080 TO-247-3L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N080 TO-247-4L 1200 38 3.5 80 100 88 SIC MOSFET
ADG120N080 TO-263-7L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N040G2 TO-247-4L 1200 68 2.7 40 45 103 SIC MOSFET G2
ADW120N040 TO-247-3L 1200 58 2.7 37 52 84 SIC MOSFET G2
ADQ120N040 TO-247-4L 1200 72 3.2 40 45 176 SIC MOSFET
ADW120N040L TO-247-3L 1200 77 2.5 35 45 176 SIC MOSFET
ADQ120N040L TO-247-4L 1200 77 2.5 35 45 176 SIC MOSFET
ADW120N040BH TO247-3L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADQ120N040BH TO-247-4L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADG120N040BH TO-263-7L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADM120N040BH DFN8*8 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADW120N016AG TO247-3L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016AG TO-247-4L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016BG TO247-3L 1200 131 2.0 12 16 203 SIC MOSFET G3
ADQ120N016BG TO-247-4L 1200 131 2.0 12 16 203 SIC MOSFET G3
ADG120N016BG TO-263-7L 1200 131 2.0 12 16 203 SIC MOSFET G3
AI3F02R12HPDB HPD 1200 400 3.0 2.58 3.1 1310 SIC MOSFET G3
AI1F02R12DCM DCM 1200 400 2.9 5.9 6.5 2010 SIC MOSFET G3
AIS08R12TK STPAK 1200 230 2.9 9.2 12 301 SIC MOSFET G3
ADK120N015 ED3 1200 200 2.5 15 17 520 SIC MOSFET
AI1F03R12M62 62M 1200 400 2.3 2.51 4.1 1620 SIC MOSFET G4
AI1F03R12ED3 ED3 1200 400 2.3 2.51 - 1620 SIC MOSFET G4
AI1F02R12ED3 ED3 1200 500 2.3 2 - 2030 SIC MOSFET G4
ADY120N016BG TOLT 1200 131 2.0 12 16 203 SIC MOSFET G3
AI1S08R12TK TPAK 1200 230 2.3 10.5 12 406 SIC MOSFET G4
ADQ120N004-P TO-247LP-4L 1200 - - 4 6 - SIC MOSFET G4
ADQ120N040 TO-247-4L 1200 58 2.7 37 52 84 SIC MOSFET G2
ADA120N080G2 TO-220F 1200 35 2.8 80 100 58 SIC MOSFET G2
1700V Family
ADQ170N022BG TO-247-4L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADW170N022BG TO247-3L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADQ170N100 TO-247-4L 1700 29 2.7 100 130 74 SIC MOSFET
2000V Family ADQ200N015 TO-247-4L 2000 244 3.0 12 17 236.2 SIC MOSFET G4
2300V Family ADQ230N020 TO-247-4L 2300 - - - - - SIC MOSFET G4
3300V Family ADQ330N030 TO-247-4L 3300 - - 28 36 - SIC MOSFET G4
4500V Family ADQ450N050 TO-247-4L 4500 - - 48 60 - SIC MOSFET G4
6500V Family ADQ650N050HV TO-247LP-4L 6500 - 4.0 45 60 - SIC MOSFET G4
10KV Family ADQ1KN130HV TO-247LP-4L 10000 - 4.0 135 175 - SIC MOSFET G4

应用方案

SGT MOSFET 充电桩、SGT MOSFET 光逆变器、SGT MOSFET 车载充电器

IGBT

安海半导体可提供大电流系列的IGBT产品，产品工作频率覆盖20〜50KHZ的应用，具备静动态损耗低、短路耐受力强的特点， 可靠性高。产品优势：更窄的mesa设计，更优化的沟槽组合设计，更高的可靠性设计，严格参照车规级要求。 产品性能：更快的开关速度，应用频率达60KHz，更高的电流密度，可达400A/cm-2。 产品应用：OBC、充电桩、焊机、开关电源、光伏逆变器、储能等。

产品选型

搜索
Class Product Name Package V(BR)CES[V] Ic [A]100℃ VCE(sat)[Typ V] VGE(th)[Typ V] Eoff [mj] VF [Typ V] Features
650V Family
ADW065N028AH TO247-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N028AH TO-247-4L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADR065N028AH TOLL 8L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADS065N028AH Q-DPAK 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADB65N028AH TO-263-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADY065N028AH TOLT 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADJ065N028AH TO263-7L-LF/T2PAK-7R 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N060 TO-247-4L 650 32 2.7 65 80 39.5 SIC MOSFET G3
ADA065N310 TO-220F 650 10 3.9 330 440 9 SIC MOSFET G4
750V Family ADW075N015 TO247-3L 750 126 2.2 15 21 187.3 SIC MOSFET G4
800V Family
ADA080N120 TO-220F 800 19 2.8 120 160 15.3 SIC MOSFET G4
ADD080N120 TO-252 800 19 2.8 120 160 15.3 SIC MOSFET G4
ADA080N160 TO-220F 800 18 2.8 160 200 21.24 SIC MOSFET G4
ADD080N160 TO-252 800 18 2.8 160 200 21.24 SIC MOSFET G4
ADA080N410 TO-220F 800 9 3.8 410 530 9 SIC MOSFET G4
ADD080N410 TO-252 800 9 3.8 410 530 9 SIC MOSFET G4
ADA080N460 TO-220F 800 7 3.8 460 590 6.7 SIC MOSFET G4
ADD080N460 TO-252 800 7 3.8 460 590 6.7 SIC MOSFET G4
AI3F02R08HPD HPD 750 600 2.2 2 2.5 1500 SIC MOSFET G4
1200V Family
ADW120N080G2 TO-247-3L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADQ120N080G2 TO-247-4L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADG120N080G2 TO-263-7L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADJ120N080G2 TO263-7L-LF/T2PAK-7R 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N080 TO-247-3L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N080 TO-247-4L 1200 38 3.5 80 100 88 SIC MOSFET
ADG120N080 TO-263-7L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N040G2 TO-247-4L 1200 68 2.7 40 45 103 SIC MOSFET G2
ADW120N040 TO-247-3L 1200 58 2.7 37 52 84 SIC MOSFET G2
ADQ120N040 TO-247-4L 1200 72 3.2 40 45 176 SIC MOSFET
ADW120N040L TO-247-3L 1200 77 2.5 35 45 176 SIC MOSFET
ADQ120N040L TO-247-4L 1200 77 2.5 35 45 176 SIC MOSFET
ADW120N040BH TO247-3L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADQ120N040BH TO-247-4L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADG120N040BH TO-263-7L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADM120N040BH DFN8*8 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADW120N016AG TO247-3L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016AG TO-247-4L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016BG TO247-3L 1200 131 2.0 12 16 203 SIC MOSFET G3
ADQ120N016BG TO-247-4L 1200 131 2.0 12 16 203 SIC MOSFET G3
ADG120N016BG TO-263-7L 1200 131 2.0 12 16 203 SIC MOSFET G3
AI3F02R12HPDB HPD 1200 400 3.0 2.58 3.1 1310 SIC MOSFET G3
AI1F02R12DCM DCM 1200 400 2.9 5.9 6.5 2010 SIC MOSFET G3
AIS08R12TK STPAK 1200 230 2.9 9.2 12 301 SIC MOSFET G3
ADK120N015 ED3 1200 200 2.5 15 17 520 SIC MOSFET
AI1F03R12M62 62M 1200 400 2.3 2.51 4.1 1620 SIC MOSFET G4
AI1F03R12ED3 ED3 1200 400 2.3 2.51 - 1620 SIC MOSFET G4
AI1F02R12ED3 ED3 1200 500 2.3 2 - 2030 SIC MOSFET G4
ADY120N016BG TOLT 1200 131 2.0 12 16 203 SIC MOSFET G3
AI1S08R12TK TPAK 1200 230 2.3 10.5 12 406 SIC MOSFET G4
ADQ120N004-P TO-247LP-4L 1200 - - 4 6 - SIC MOSFET G4
ADQ120N040 TO-247-4L 1200 58 2.7 37 52 84 SIC MOSFET G2
ADA120N080G2 TO-220F 1200 35 2.8 80 100 58 SIC MOSFET G2
1700V Family
ADQ170N022BG TO-247-4L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADW170N022BG TO247-3L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADQ170N100 TO-247-4L 1700 29 2.7 100 130 74 SIC MOSFET
2000V Family ADQ200N015 TO-247-4L 2000 244 3.0 12 17 236.2 SIC MOSFET G4
2300V Family ADQ230N020 TO-247-4L 2300 - - - - - SIC MOSFET G4
3300V Family ADQ330N030 TO-247-4L 3300 - - 28 36 - SIC MOSFET G4
4500V Family ADQ450N050 TO-247-4L 4500 - - 48 60 - SIC MOSFET G4
6500V Family ADQ650N050HV TO-247LP-4L 6500 - 4.0 45 60 - SIC MOSFET G4
10KV Family ADQ1KN130HV TO-247LP-4L 10000 - 4.0 135 175 - SIC MOSFET G4

应用方案

IGBT 充电桩、IGBT 光逆变器、IGBT 车载充电器